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Emission characteristics of planar field electron emitters containing carbon nanotubes operating in the high current density mode

机译:含有碳纳米管的平面场电子发射器在高电流密度模式下的发射特性

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摘要

Planar field electron emitters containing carbon nanotubes that demonstrate stable emission currents with densities about 1 A/cm~2 have been fabricated using the chemical vapor deposition method. The analysis of field emission characteristics based on Fowler-Nord-heim theory allowed one to calculate not only the field amplification coefficient β, but also the total emission area A of all the emitting nanotubes. Using the value of A and an estimate of the emission area of an individual nanotube fulfilled in this work, the approximate number of emitting nanotubes N before and after the flow of the high density emission current, has been calculated. It has been found that the concentration of the emitting nanotubes N in such field emitters after the high density emission current flow was about 10~5 cm~(-2). Besides this, the location of light radiating nanotubes heated by high density emission currents has been investigated. This has revealed the regions of the emitter surface that gave the main contribution to the electron emission.
机译:采用化学气相沉积法制备了含有碳纳米管的平面场电子发射器,其发射电流稳定,密度约为1 A/cm~2。基于Fowler-Nord-heim理论的场发射特性分析不仅可以计算场放大系数β,还可以计算所有发射纳米管的总发射面积A。利用A的值和对本工作中实现的单个纳米管发射面积的估计,计算了高密度发射电流流动前后发射纳米管N的近似数。研究发现,在高密度发射电流流动后,这种场发射器中发射纳米管N的浓度约为10~5 cm~(-2)。除此之外,还研究了由高密度发射电流加热的光辐射纳米管的位置。这揭示了对电子发射做出主要贡献的发射器表面区域。

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