Identification of a bistable defect in silicon: The carbon interstitialhyphen;carbon substitutional pair

摘要

By using a combination of deep level transient spectroscopy (DLTS) and electron paramagnetic resonance techniques applied to samples of varying compositions, we identify the bistable defect atEcminus;0.17 eV in irradiatednhyphen;type silicon as a carbon interstitialhyphen;carbon substitutional pair. It arises upon annealing of interstitial carbon, which is also the precursor to a remarkable recently discovered fourhyphen;level multistable defect which we now tentatively identify as a carbonhyphen;phosphorus pair. We demonstrate a new simple method for distinguishing the bistable carbonhyphen;carbon pair defect from the oxygenhyphen;vacancy pair under the same DLTS peak.