Suppression of invading fluorine atoms into AlInAs/InGaAs by phosphidization

摘要

A process technology to suppress invading fluorine (F) atoms into the AlInAs layer at raised temperature is investigated using AlInAs/InGaAsHEMT wafers grown on InP substrates. Removal of F atoms adsorbed on the AlInAs surface and formation of a barrier layer to suppress F diffusion are attempted by a plasma process. It is demonstrated by SIMS measurements that invasion of F atoms is suppressed even after annealing at 400℃ for the AlInAs layer treated successively with phosphine plasma at room temperature and 250℃. Hall measurements also reveal that a reduction in the 2 dimensional electron gas density is suppressed.