Percolation simulation for dielectric breakdown of ultra-thin silicon dioxides incorporating the non-Gaussian hole transport

摘要

A new percolation simulation was performed for analyzing the dielectric breakdown of ultrathin (< 2nm) silicon dioxides considering non-Gaussian hole transport. In addition to the previous percolation model non-uniform defect creation has been considered where the defect are generated in the oxide films in accordance with the trapped hole distribution which is calculated by continuous time random walk method. The proposed model can reproduce experimental Weibull plots for various oxide thickness assuming the appropriate number of the conduction paths for defining the break-down events.