The GaN films were formed on SiO{sub}2 and Si substrates using a plasma sputter source operated with a Ga sputtering target and N{sub}2 plasma. Excited species of Ga, atomic and molecular nitrogen were confirmed present in the plasma from the optical emission spectrum analysis. When the Ga target was placed in a magnetic field free region, constant supply of Ga flux was observed. When the target was put inside of the confinement magnetic field, the surface of Ga formed a thick crust and the amount of Ga flux from the surface decreased with time. The addition of Ar into the N{sub}2 discharge recovered the intensities of line spectra from Ga corresponding to the enhanced sputtering by Ar. X-ray diffraction spectrographs of the produced films revealed strong peaks at 2θ-angle of 34.5° indicating preferred orientation at the (002) hexagonal or (111) cubic reflections of GaN.
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