Atomic layer epitaxy of GaAs using nitrogen carrier gas

摘要

Atomic layer epitaxy (ALE) of GaAs is achieved in a relatively wide temperature range from 490 to 520thinsp;deg;C by using nitrogen carrier gas. For hydrogen carrier gas, the corresponding temperature range is only from 490 to 500thinsp;deg;C. The upper temperature limits for ALE correspond to the decomposition temperatures of TMG in each carrier gas. Gas analysis reveals that using nitrogen expands the temperature range by suppressing TMG decomposition.