Chemical vapor deposition of copper from Cu+1precursors in the presence of water vapor

摘要

Copper films have been deposited by low pressure chemical vapor deposition from mixtures of the Cu+1precursor copper hexafluoroacetylacetonate vinyltrimethylsilane and water vapor. The addition of water vapor at the optimum concentration more than doubles the deposition rate and substantially reduces the nucleation time without adversely affecting the copper film resistivity, but excess amounts of water vapor significantly increase the copper resistivity. Auger electron spectroscopy analysis detects no impurities in copper films deposited under optimum water conditions, but detects oxygen in films deposited under excess water conditions, suggesting copper oxide formation.