Singlehyphen;ended output GaAs/AlGaAs single quantum well laser with a dryhyphen;etched corner reflector

摘要

GaAs/AlGaAs single quantum well lasers with integrated corner reflectors have been fabricated using chemically assisted ion beam etching. The airhyphen;GaAs interface is internally totally reflecting, and no coherent radiation is transmitted through the corner reflector. The corner reflector laser was compared with a conventional Fabryndash;Perot laser cleaved from the same wafer. An 11percnt; reduction in threshold current and a reduction of the farhyphen;field angle from 4.4deg; to 0.7deg; was measured.