Si nanowire p-FET with asymmetric source-drain I-V characteristics

摘要

We report on the electrical characteristics and the effects of source/drain Schottky barrier heights (SBHs) in a lightly implanted silicon nanowire field-effect transistor (SiNW FET). We prepared the SiNW FETs by boron implantation with a dose of 1 x 10(12) ions/cm(2) and an energy of 10 keV. Our results indicated that the nature of the metal-contacts on the source/drain electrodes had a significant impact on the current-voltage characteristics for B-implanted SiNW FETs. The current-voltage (I-D-V-DS) characteristics for the B-implanted SiNW FETs with a symmetric IV behavior exhibited a clear p-channel FET behavior with a field-effect mobility of similar to 0.4 cm(2)/Vs and a hole concentration of similar to 1.7 x 10(17) cm(-1). A 2D ATLAS simulation (SILVACO Inc.)with two different Schottky barrierheights of source/drain contacts to the SiNW supported the experimental results well.