GaAs/AlGaAs optical waveguides on silicon substrates grown by molecular beam epitaxy

摘要

A singlehyphen;heterostructure optical waveguide at 1.3 mgr;m wavelength in GaAs/AlGaAs, grown on Si by molecular beam epitaxy, is demonstrated. 6hyphen;mgr;mhyphen;wide ridge waveguides with 0.25 mgr;m ridge height had single modes and the measured average propagation loss was 11.7 dB/cm. The principal loss was mainly due to the relatively large freehyphen;carrier concentration in the guiding layer. It is expected that lower freehyphen;carrier concentration (sim;1015cmminus;3) will lead to waveguides with propagation loss of less than 3 dB/cm.