High performance HgCdTe photoconductive devices grown by metalorganic chemical vapor deposition

摘要

Photoconductive detector arrays fabricated from metalorganic chemical vapor deposited epitaxial films of Hg0.8Cd0.2Te on both CdTe and Al2O3substrates are reported for the first time. These devices operate in the 8ndash;12hyphen;mgr;m spectral region and have detectivities of 3.6times;1010and 2.6times;1010cmthinsp;Hz1/2/W for CdTe and Al2O3substrates, respectively. These results approach background limited performance, and as such establish the feasibility of metalorganic chemical vapor deposited HgCdTe for use in advanced infrared detection systems.