AN EPR STUDY OF THE EFFECT OF SUBSTRATE ORIENTATION ON VAPORhyphen;GROWN GaP

摘要

The results of EPR and resistivity measurements on vaporhyphen;grown GaP are discussed. The study shows that the appearance of Fe3plus;EPR signals and the resistivity values are dependent on substrate orientation. A model based on the formation of Ga vacancies during growth is proposed to account for the observations.