We investigate the effects of continuous light illumination on single-electron transport via quantum dots in silicon-on-insulator field-effect transistors (SOI-FETs). In doped-channel FETs, current flows by single-electron tunneling via an individual donor. Under light, the current exhibits intermittency, observed as random telegraph switching (RTS). The number of current steps increases proportionally with the incident photon flux. The current intermittency is ascribed to be trapping and detrapping of a photo-generated electron in a single donor in the channel based on its dependence on light intensity and temperature.
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