Ge:Ga blockedhyphen;impurityhyphen;band detectors having longhyphen;wavelength thresholds of 190 mgr;m and peak quantum efficiencies of 4percnt; have been fabricated. This performance approaches that of statehyphen;ofhyphen;thehyphen;art discrete Ge:Ga photoconductors, with the additional benefit of good response at wavelengths longer than that obtained with unstressed photoconductors.
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