Electron effective mass and bandhyphen;gap dependence on alloy composition of AlyGaxIn1minus;yminus;xAs, lattice matched to InP

摘要

AlyGaxIn1minus;yminus;xAs structures were prepared by molecular beam epitaxy to determine both the electron effective mass and bandhyphen;gap dependence of the InP latticehyphen;matched alloy. Cyclotron resonance and photoluminescence measurements were used, respectively. The effective mass obtained after nonparabolicity correction ismast;=0.0403+0.0817y. The bandhyphen;gap relationships obtained at 300 and 5.5 K areEg(eV)=0.752+1.453y, andEg(eV)=0.792+1.530y, respectively.