Monolithic integration of a double heterostructure lighthyphen;emitting diode and a fieldhyphen;effect transistor amplifier using molecular beam grown AlGaAs/GaAs

摘要

A surface emitting AlGaAs/GaAs double heterostructure lighthyphen;emitting diode (LED) and an amplifier composed of three GaAs fieldhyphen;effect transistors have been first integrated on a single GaAs substrate. Molecular beam epitaxy has been extensively used to grow a sixhyphen;layer heterostructure involving a high resistivity AlGaAs layer for electronic isolation. Input voltage to output optical power transfer characteristics are presented. It has also been shown that this integrated device successfully operates at the speed limited by the LED rise time, 7 ns in the present case.