Pulsed electron beam annealing of phosphorushyphen;implanted CuInS2has been found to be an efficient method inphyphen;type doping of CuInS2. A sheet resistance as low as 10.1 OHgr;/laplac;, a sheet carrier concentration as high as 2.6times;1016cmminus;2, and a hole mobility as high as 499 cm2/Vthinsp;s have been obtained. The irradiation energy density for the best doping condition was determined to be in the range sim;11ndash;13 J/cm2. Using Van der Pauw/Hall technique in conjunction with a chemical etching technique, effective carrier concentration profiles have been determined with a maximum carrier concentration of 9times;1019cmminus;3. Excellentphyphen;nCuInS2homojunctions have been fabricated by electron beam pulse annealing with an ideality factor of 1.75.
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