Fabrication of IrSi3/phyphen;Si Schottky diodes by a molecular beam epitaxy technique

摘要

IrSi3/phyphen;Si Schottky diodes have been fabricated by a molecular beam epitaxy technique at 630thinsp;deg;C. Good surface morphology was observed for IrSi3layers grown at temperatures below 680thinsp;deg;C, and an increasing tendency to form islands is observed in samples grown at higher temperatures. Good diode currenthyphen;voltage characteristics were observed and Schottky barrier heights of 0.14ndash;0.18 eV were determined by activation energy analysis and spectral response measurement.