Simulation study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method with Self-consistent Potential

摘要

We have designed a numerical simulator for HfO_2-based Ferroelectric Tunnel Junction (FTJ) memory based on Non-Equilibrium Green Function (NEGF) method and self-consistent potential. We also fabricate an FTJ and calibrate our simulator by experimental data. Metal-Ferroelectric-Insulator-semiconductor (MFIS) FTJ has large read current and high TER ratio, because of large asymmetry of dielectric screening property of electrodes. We adjust bottom semiconductor electrode property and reduce the thickness of ferroelectric layer to obtain High read current, high TER and low depolarizing field. Finally, we show a potential for scaling the FTJ down to sub-20 nm diameter.