Changed charge partitioning for sub-100nm MOSFET due to ballistic transport

摘要

This paper demonstrates that ballistic carriers change inversion-charge partitioning between source and drain during switch-off of MOSFET with sub-100nm channel length. We calculated transient current responses by using Monte Carlo simulation and estimated contribution of ballistic carriers to switching characteristics. The ratio of carriers flow to drain in 40nm MOSFET is larger than that in conventional one because the ration of ballistic carriers increase with decreasing of channel length. This will result in more impact on switching-time than expected from channel length reduction.