High performance CMOS technology by using low temperature poly-Si TFTs on a glass substrate

摘要

A high performance TFT CMOS technology on a glass substrate (300mm×300mm) is developed with the laser-crystallized low-temperature poly-Si transistors fabricated below 450℃. Maximum operating frequency of 133MHz is obtained at a supply voltage of 5V for a 40 stage shift-register with 1 μm channel length. Propagation delay time of 0.18ns is obtained for a 121 stage CMOS ring oscillator with 0.5μm channel length. This technology will pave the way for "system LCD".