Dark current reduction of InGaAsP/InAlAs super-lattice avalanche photodiode

摘要

We studied dark current reduction of avalanche photodiode using asymmetric InGaAsP/InAlAs superlattice structure and strain-compensated InGaAsP/InAlAs superlattice structure, which were fabricated by gas-source molecular beam epitaxy. In asymmetric InGaAsP/InAlAs superlattice structure, the dark current value of 0.4 μA at a M = 10 was achieved. This is the smallest value of dark current for InGaAsP/InAlAs SL-APD, as we know. The strain-compensated InGaAsP/InAlAs superlattice structure is the excellent example among symmetric superlattices. The APD device including strain-compensated InGaAsP/InAlAs multiplication layer also improves the dark current property while its excellent low excess noise property maintains.