Enhanced spectral power density and reduced linewidth at 1.3 mgr;m in an InGaAsP quantum well resonanthyphen;cavity lighthyphen;emitting diode

摘要

The active region of an InGaAsP singlehyphen;quantum well lighthyphen;emitting diode (LED) emitting at 1.3 mgr;m has been placed in the antinode of a resonant cavity consisting of a 32hyphen;period distributed Bragg reflector (DBR) and a top silver mirror, with reflectivities of 92percnt; and 95percnt;, respectively. The dominant feature of the 300 K electroluminescence emission at all current levels is a 3 nm (2.8 meV) wide spontaneous emission peak centered on the cavity resonance wavelength. The spectral power density of the structure is more than one order of magnitude higher as compared to a structure without cavity. The resonanthyphen;cavity LED operates without gain yet the extremely narrow spectrum indicates that the structure is suitable for wavelength division multiplexing applications.