Characteristics of iodine doping in CdTe layers on (100)GaAs have been studied in MOVPE using isopropyliodine (IPI) and ethyliodine (EI) as a n-type dopant Dimethylcadmium (DMCd), tertialybutyltelluride (DtBTe), diethyltelluride (DETe) and diisopropyltelluride (DiPTe) were used as precursors. Electron densities of doped layers were controlled from 10{sup}15 to 10{sup}8 cm{sup}(-3) by controlled growth temperature, iodine supply rate and hotwall temperature. Effect of doping on the growth characterisics was also studied.
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