Simple method for examining sulphur passivation of facets in InGaAsndash;AlGaAs (lgr;=0.98 mgr;m) laser diodes

摘要

The effect of (NH4)2Sxtreatment of the facet of InGaAs/AlGaAs ridge waveguide (RW) laser diodes on the nonradiative current and catastrophic optical damage (COD) level is reported. Using the powerndash;voltagendash;current (Pndash;Vndash;I) characteristics of the electroluminescence at low injection levels, changes in the density of surface states at the laser facets are described. copy;1996 American Institute of Physics.