The first measurement of the impact ionization rates for electrons and holes in Al0.48In0.52As is reported. Photomultiplication measurements in pin avalanche photodiodes give agr;/bgr;ape;2.5ndash;3.0 in the electric field range 3.3times;105V/cmle;Fle;4.3times;105V/cm. This material can therefore be used to implement a potentially highhyphen;performance, longhyphen;wavelength avalanche photodiode, with separate absorption and multiplication regions and a highhyphen;low electric field profile (HIhyphen;LO SAM APD).
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