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SIMPLE TECHNIQUE FOR VERY THIN SiO2FILM THICKNESS MEASUREMENTS

机译:SIMPLE TECHNIQUE FOR VERY THIN SiO2FILM THICKNESS MEASUREMENTS

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摘要

The thickness of films (900 Aring;) of silicon dioxide on silicon can be determined by observation near Brewster's angle for silicon with the light polarized in the plane of incidence. Since the intensity of the reflected light increases with thickness for these films, the measurement is made by direct comparison of the light reflected by a sample with a calibrated SiO2on silicon ``thickness gauge.'' Film thicknesses can be estimated to an accuracy of aboutplusmn;30 Aring; for thicknesses less than 150 Aring; andplusmn;50 Aring; for thicknesses between 150 Aring; and 900 Aring;.

著录项

  • 来源
    《applied physics letters》 |1967年第8期|257-259|共页
  • 作者

    W. A. Pliskin; R. P. Esch;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
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  • 入库时间 2024-01-25 19:52:23
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