Extraction of electronic parameters of Schottky diode based on an organic Indigotindisulfonate Sodium (IS)

摘要

An Au/Indigotindisulfonate Sodium (IS)/n-Si/Al device was fabricated and the currentvoltage measurements of the devices showed diode characteristics. Then the currentvoltage (IV), capacitancevoltage (CV) and capacitancefrequency (Cf) characteristics of the device were investigated at room temperature. The values of various junction parameters such as ideality factor, barrier height, and series resistance were determined from the forward bias IV characteristics, Cheung method, and Norde's function. The ideality factor of 1.73 and barrier height of 0.83 eV were calculated using currentvoltage characteristics. It has been seen that the IS layer increases the effective barrier height of the structure because this layer creates the physical barrier between the metal and the semiconductor. The lower values of capacitance at high frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the n-Si that cannot follow the alternating current (ac) signal.