Structural damage at the Si/SiO2interface resulting from electron injection in metalhyphen;oxidehyphen;semiconductor devices

摘要

With electron spin resonance, we have observed structural changes in metalhyphen;oxidehyphen;semiconductor structures resulting from the photoemisson of electrons from the silicon into the oxide. A trivalent silicon defect at the Si/SiO2interface, termedPb, is shown to be responsible for the interface states induced by electron injection. We find that thesePbcenters are amphoteric interface state defects.