Informationhyphen;storage device using surface diodes

摘要

A concept for a highhyphen;density memoryhyphen;storage device is described. Information is recorded as small implantedp+(orn+) diodes, formed by a focused ion beam, on then+(orp+) surface of a largehyphen;area diode and read by a focused electron beam. Preliminary experimental results using ion implantation through an aperture mask to simulate a focused ion beam, and a scanning electron microscope for readout, demonstrate better than 0.5hyphen;mgr; bit spacing. Evaluation indicates that 1010bits/cm2storage density is possible, with gsim;10 Mbits/sec write/read rates, and access times 30 mgr;sec to 1011hyphen;bit data fields.