High-efficiency silicon CMOS power amplifier for GHz-band digital cellular system

摘要

In sub-0.1-um miniaturized MOSFETs, an application to GHz-band digital cellular system, called as "RF-CMOS," is very promising. we have proposed a silicon class-B complementary push-pull power amplifier for high-linerity and high-efficiency operation. In this paper, RF characteristics of the CMOS power amplifiers are evaluated using RF measurements and simulations.