Titanium nitride Schottkyhyphen;barrier contacts to GaAs

摘要

The electrical properties and interface chemistry of ideal titanium nitride Schottkyhyphen;barrier contacts to GaAs are investigated by using xhyphen;ray photoemission spectroscopy (XPS), currenthyphen;voltage (Ihyphen;V), and capacitancehyphen;voltage (Chyphen;V) techniques. The TiN films were grown on cleannhyphen;type GaAs (100) surfaces by reactive evaporation of Ti in a NH3atmosphere within the XPS system. The TiNhyphen;GaAs Schottkyhyphen;barrier height is 0.83 eV.Ihyphen;VandChyphen;Vmeasurements were made for a sequence of anneal temperatures up to 700thinsp;deg;C; the electrical properties are nearly ideal up to 600thinsp;deg;C. TiN is found to be a relatively inert nonmetallic alternative Schottkyhyphen;barrier contact to GaAs that is suitable for highhyphen;temperature applications.