A Novel Method to Improve the Figure of Merit of Microminiaturised Transistors

摘要

In this study, a novel synthesis method to improve the frequency properties of junction transistors is presented. It is concluded that the use of a modified base impurity distribution providing retarding field over a portion of the base leads to a significant improvement in base transit time and high frequency figure of merit as compared with the characteristics of a junction transistor having conventional base doping distributions. The improvement is possible without altering the dimensions of the device.