Realization of crescenthyphen;shaped SiGe quantum wire structures on a Vhyphen;groove patterned Si substrate by gashyphen;source Si molecular beam epitaxy

摘要

SiGe/Si quantum wire structures were successfully fabricated on a Vhyphen;groove patterned Si substrate by using gashyphen;source Si molecular beam epitaxy (GShyphen;SiMBE). A cross sectional image of transmission electron microscope clarified a crescenthyphen;shaped SiGe layer at the bottom of the Vhyphen;groove owing to anisotropy of the growth rate on the different crystal orientations in GShyphen;SiMBE.