GaInAsP/InP lasers with etched mirrors by reactive ion etching using a mixture of ethane and hydrogen

摘要

A reactive ion etching method is applied to fabricate mirrors of 1.5 mgr;m GaInAsP/InP mass transport lasers using a mixture of ethane and hydrogen as an etchant. Threshold currents as low as 35 mA are achieved for the 300hyphen;mgr;mhyphen;long cavity lasers with one etched and one cleaved facet. The differential quantum efficiencies of the lasers with one dry etched facet and both dry etched facets are 13 and 9.5percnt;, respectively.