Fluoride-Si resonant tunneling diodes co-integrated with Si-MOSFETs

摘要

Resonant tunneling diodes (RTDs) composed of heteroepitaxial CaF{sub}2/CdF{sub}2/CaF{sub}2 structure grown on Si substrates were co-integrated with Si-MOSFETs, and test circuits of SRAM cell were fabricated. The circuits were fabricated through optimization of process of ultra-thin fluoride hetero layers growth on the high-dose ion implanted region. Bistable operation was observed on the circuit in which two RTDs were connected in series. SPICE simulation was also performed, in which writing time was evaluated and operation tolerance for fluctuation of RTD characteristics was discussed.