This paper describes the device design and process technologies of InP HBTs developed at NTT for application to 40-Gbit/s fiber optic communications. Both single- and double-HBTs fabricated from MOVPE-grown structures exhibit f{sub}t of over 150 GHz and f{sub}(max) of over 200 GHz at a current density of 1 mA/μm{sup}2. Using these HBTs, 45-GHz static frequency divider ICs and 43-Gbit/s decision ICs have been successfully demonstrated. This paper also reports on the fabrication of 10 Gbit/s 1:16 demultiplexer ICs consisting of 1200 transistors. It is shown that the technologies presented here have a high potential to provide highly integrated circuits. Reliability issues are also described briefly.
展开▼
