Use of a rapid anneal to improve CaF2:Sithinsp;(100) epitaxy

摘要

Posthyphen;anneals of short duration at high temperature are shown to improve significantly the quality of CaF2films on Si (100). An anneal at 1100thinsp;deg;C for 20 s in an Ar ambient reduced khgr;min, the ratio of backscattered 1.8hyphen;MeV4He+ions in the aligned to random direction, from 0.26 for an ashyphen;grown CaF2film to 0.03 following the posthyphen;anneal. This is the best khgr;minyet reported for the CaF2:Si (100) system. The posthyphen;anneal films also show improved chemical, mechanical, and electrical properties.