Semiconductor-metal transition in a quasi two-dimensional system

摘要

The possibility of semiconductor-metal transition in a quantum well of the GaAs/Ga1-xAlxAs system is investigated within the effective mass approximation. The vanishing of donor ionization energy as a function of well width and donor concentration shows that no transition is possible below a well width of 60 Angstrom. Results are discussed in the light of existing literature. (C) 2001 Elsevier Science Ltd. All rights reserved. References: 18