Selfhyphen;limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

摘要

Selfhyphen;limitation in the surface segregation of Ge atoms in the Si epitaxial overlayers arising from the surface bond geometry on Si(100) during molecular beam epitaxy has been investigated theoretically. It was found that Ge surface segregation is strongly limiting when the Ge concentration exceeds 0.01 monolayer. As a result of this selfhyphen;limitation, segregation profiles of Ge in Si overlayers are found to decay nonexponentially in the growth direction with a kink in the profile around 3times;1020cmminus;3, which is in close agreement with the experimental observation. The kinetic barrier of the Ge surface segregation is estimated to be 1.63plusmn;0.1 eV.