Secondary ionhyphen;energy distributions (SIEDs) emitted from Si under various conditions of targets (Si, SiO2) and primary ions (Ar+, O+) were measured and thin SiO2films were deposited by magnetron sputtering techniques under the corresponding conditions to the SIED experiments. The most probable energies of silicon oxygen cluster ions of SimO+n(m,n=1, 2,...) are equal to those of Al+thermal ions, while those of Si+l(l=1, 2,...) remain unchanged with the introduction of oxygen in chamber during Ar+ion bombardment. The currenthyphen;voltage plots of SiO2films are also measured and found to be influenced by the deposition conditions. It is concluded that the differences in currenthyphen;voltage characteristics of SiO2films prepared under various sputtering conditions can be reasonably explained in terms of the changes in the most probable energy of the sputtered particles.
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