Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laserhyphen;thresholdhyphen;current temperature sensitivity

摘要

Nonradiative recombination with the rate strongly dependent on the injected carrier densitynas agr;n2ndash;4has been found to be the cause of the output saturation in 1.3hyphen;mgr;m InGaAsP/InP surface emitting double heterostructure light emitting diodes. It has been found that this nonradiative recombination is also responsible for the strong temperature sensitivity of InGaAsP/InP double heterostructure laser threshold current.