Novel S/D engineering of surrounding gate transistor (SGT) for suppressing substrate bias effect

摘要

The dependence of I{sub}D-V{sub}G characteristics on the shape of Source and Drain (S/D) diffusion layer of Surrounding Gate Transistor (SGT) is analyzed. The ConVex diffusion layer type SGT (CV-SGT), whose diffusion layers are penetrate the area under the silicon pillar, does not show a substrate bias effect. This S/D engineering for SGT for suppressing the substrate bias effect is very useful for future high performance SGT designs.