Dielectric spectroscopy of semiconductors (DSS) reveals the frequency spectra of delayed electronic transitions in semi-insulating systems and it may be used to study the trapping/de-trapping processes in the space charge regions of Schottky diodes and at the metal-semiconductor interfaces. The authors report measurements for two types of diodes with different bulk doping, in the frequency range 0.01 Hz to 10 kHz, with the temperature and bias as variable parameters. The trapping processes in the space charge region are shown to have non-exponential time dependence, and the interfacial processes give strong deviations from the classically expected behaviour at very low frequencies and high temperatures, with a strong dependence on external bias. Certain phenomena appear to point to many-body interactions having a role in determining the rate processes in these Schottky diodes.
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