Interaction of lowhyphen;energy implanted atomic H with slow and fast diffusing metallic impurities in Si

摘要

The interaction of hydrogen, injected into silicon using lowhyphen;energy ion bombardment, with slow (Ti and V) and fast (Cr and Au) diffusing impurities was investigated. It was found that this H ion bombardment of the Si surface was effective in reducing the electrically active concentration of only the fast diffusing impurities. The results are explained by damage enhanced diffusivity and surface gettering of the fast diffusing impurities.