Two‐dimensional effects in two‐terminaln+‐p‐n+devices fabricated by planar technology

摘要

I‐Vcharacteristics of two‐terminaln+‐p‐n+devices fabricated by planar technology are studied theoretically and experimentally. A quasi‐two‐dimensional (2D) model is used to interpret the experimental results. The results suggest that the 2D effects are a very likely candidate to explain the difference in our results and those obtained with the conventional 1D BARRIT diodes.