Dynamic behavior of photocarriers in a GaAs metalhyphen;semiconductorhyphen;metal photodetector with subhyphen;halfhyphen;micron electrode pattern

摘要

Simulation results of the temporal evolution of photocurrent in an interdigitated GaAs metalhyphen;semiconductorhyphen;metal photodetector are presented. The dependence of response time on the distance between fingers (0.1 and 0.25 mgr;m) is investigated. The solutions of the timehyphen;dependent Schrouml;dinger equation and ensemble Monte Carlo calculations are employed. For a device with 0.1 mgr;m finger spacing, the response time of an intrinsic detector is less than 2 ps, with hole current decay being the major limiting factor. The role of parasitics is shown to significantly increase the simulated response time.