机译:Design of 30 nm FinFETs and Double Gate MOSFETs with Halo Structure
Center for Interdisciplinary Research, Tohoku University, Sendai-shi, 980-8578 Japan and JST-CREST, Tokyo, 102-0075 Japan;
FinFET; halo I/I; MOSFET; threshold voltage roll-off; S-factor;