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Physical behaviour of CdO films prepared by activated reactive evaporation

机译:Physical behaviour of CdO films prepared by activated reactive evaporation

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High transparent and conductive CdO films were prepared using the activated reactive evaporation technique on Corning 7059 glass substrates. The film resistivity and transmittance were found to be influenced by the glow power of the discharge. Electron mobilities of 4-28 cm2V-1s-1and carrier density in the range 7.8*1018-6.97*1019cm-3were observed. The energy gap of the films calculated from the optical absorption measurements was 2.42 eV.

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