Optimization and application of GaAs-based quantum wire transistors utilizing Schottky in-plane gates and wrap gates

摘要

Basic device characteristics GaAs Schottky in-plane gate (IPG)- and wrap gate (WPG)-based quantum wire transistors were investigated, and the device structures were optimized for their integrated circuit applications. The gate controllability in each gate structure including the gate-voltage dependence of effective wire width was characterized by current-voltage and magnetoresistance measurements. The control of conductance step characteristics and the threshold voltage in the IPG/WPG quantum wire transistors were also discussed.